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High-temperature memristors enabled by interfacial engineering

Science·
Read the paperDOI: 10.1126/science.aeb9934

TL;DR

Imagine your phone's memory chip is like a light switch. Normally, if you put that switch near a campfire, the plastic melts and it stops working. Scientists found that in regular memory chips, the metal parts essentially 'wander around' when things get extremely hot, mixing together and breaking the switch permanently. The fix? They wrapped one layer with graphene—an ultra-thin sheet of carbon atoms arranged like chicken wire. Graphene acts like a non-stick pan: the wandering metal atoms just can't get a grip and slide off instead of mixing in. With this trick, the memory switches kept working even at 700°C—hotter than molten aluminum—for billions of on-and-off cycles. It's like replacing the melting plastic switch with one made of ceramic, just by adding one atom-thin protective layer.

Non-volatile memories (NVM) that operate reliably at high temperature are essential for electronics in extreme environments. Here, we reported graphene (Gra)/HfOx/tungsten (W) memristors that operated reliably up to 700 °C with an ON/OFF current ratio >10^3, data retention >50 hours and endurance >10^9 switching cycles. Transmission electron microscopy (TEM) revealed significant W diffusion into the inert platinum (Pt) electrode of conventional Pt/HfOx/W memristors after high-temperature annealing, which was an effect responsible for the thermal failure of conventional devices but not observed in Gra/HfOx/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on graphene than metals like Pt. These results underscore the critical role of interfacial engineering and potential of 2D materials in enabling reliable high-temperature NVM technologies.

  • 1Graphene/HfOx/W memristors demonstrated reliable operation up to 700 °C with an ON/OFF current ratio exceeding three orders of magnitude, data retention over 50 hours, and write endurance exceeding 10^9 switching cycles.
  • 2TEM and EDS/EELS analyses revealed that W atoms diffuse through HfOx and into the Pt bottom electrode in conventional Pt/HfOx/W devices during high-temperature annealing, causing irreversible device failure, whereas no significant W diffusion was observed in graphene-based devices.
  • 3First-principles calculations showed that W adatoms bind much more strongly to Pt (adsorption energy -9.08 eV) than to graphene (-2.80 eV), and W diffusion coefficients on Pt are approximately three orders of magnitude greater than on graphene, explaining graphene's superior thermal stability.
  • 4The devices could be switched using 30 ns-wide voltage pulses at ~1.5 V operating voltage at 700 °C, and were successfully programmed into 32 distinct resistance states at 700 °C with Ohmic-like linearity.
  • 5A 32x32 (1K) crossbar array was fabricated with a device yield of 81.25%, demonstrating the scalability and integration potential of Gra/HfOx/W memristors for high-density memory applications.
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